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This paper deals with the low temperature characterization of graphene devices fabricated on CVD graphene via a scalable route. Longitudinal resistivity and Hall resistance of Hall bar structures were measured at 4 K and 20 K while sweeping magnetic fields up to 11 T. Features in the magnetic field dependence of longitudinal resistivity were interpreted in terms of weak localization and Landau level...
It is known that the fabrication of graphene NEMS raises several technological issues. Beyond capillarity effects, the quality of the interface between graphene and resist is the most critical challenge. In this paper we propose a high yield route for the fabrication of suspended graphene structures, using technological steps compatible with large-scale fabrication. AFM and Raman characterization...
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