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The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field, was evaluated. The TFET was fabricated by inserting a parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit...
CMOS tunnel FETs (TFETs) with vertical-tunnel-multiplication (VTM) were fabricated. VTM TFETs initiate band-to-band tunneling (BTBT) parallel to the gate electric field and effectively extend the tunnel area. Impact of the VTM was analyzed using a distributed-element circuit model, and the drain current multiplication by extended tunnel area was experimentally revealed for the first time.
We experimentally investigated the device performance of n+- poly-Si/PVD-TiN stacked gate FinFETs with different Hfin's. It was found that mobility enhances in the tall Hfin devices due to the increased tensile stress. However, as Lg decreases, Ion for tall Hfin case becomes worse probably due to high Rsp. It was also confirmed that Vth variation increases with increasing Hfin due to the rough etcing...
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