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A heterostructure photonic crystal band edge mode cavity resonating at the wavelengths of monolayer MoS2 photoluminescence is presented. The resonant mode is laterally confined by a mode gap near Γ. Emission enhancement of the integrated monolayer MoS2 is demonstrated experimentally.
Wide bandgap semiconductors such as gallium nitride (GaN) are essential constituents of future optical circuits, as their optical response can accommodate a broad wavelength range while suppressing two-photon absorption and free-carrier absorption effects that are encountered with silicon (Si) structures. Their direct wide bandgap is also favourable for the incorporation of active elements. Furthermore,...
GaN L3 photonic crystal cavities were fabricated based on a genetic algorithm optimization. Optical characterization of several replicas led to an average unloaded quality factor of 16900, which is well accounted for by first-principles simulations.
We combine the fast guided-mode expansion with a genetic algorithm to perform a global optimization of several widely used photonic crystal cavity designs. The procedure consistently improves their quality factor by more than one order of magnitude, and is in addition highly customizable.
Semiconductor quantum dots (QDs) have very recently become candidate building blocks of a quantum information technology, after the experimental proof of full single-qubit control. An essential requirement of the quantum information paradigm is the possibility for two qubits to interact coherently in a controlled fashion. Given the recent success in embedding QDs in Photonic Crystal (PHC) devices,...
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