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The cover depicts an image of bright single photons emitted from gallium nitride. This illustrates a potential quantum nanoelectronic circuit that uses single photons for information transfer, as described in article number 1605092 by Dirk Englund and Igor Aharonovich.
Room‐temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.
We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-β lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.
GaN L3 photonic crystal cavities were fabricated based on a genetic algorithm optimization. Optical characterization of several replicas led to an average unloaded quality factor of 16900, which is well accounted for by first-principles simulations.
Lasing is demonstrated in III-nitride photonic crystal nanobeam cavities grown on silicon. Laser characteristics are well accounted for by the large spontaneous emission coupling factor inherent to nanobeams and the InGaN quantum well material gain.
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