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We present a newly developed continuous physics-based electrothermal I-V compact model suitable for the study intermodulation distortion in GaAs HEMTs and MESFETs. The model, which is an improvement of the standard Chalmers model, accurately includes self-heating while significantly minimizing the need for parameter fitting. The model, which is carefully calibrated using experimental data for submicrometer...
We use a newly developed three-dimensional electrothermal Monte Carlo simulator, using finite-element meshing, to study metal-insulator field-effect transistors (MISFETs) based on a single InAs Nanowire. The model involves the coupling of an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, and is carefully calibrated with data from experimental work on these devices...
An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) grown on various substrate materials including SiC, Si, GaN, and sapphire. The simulation method is an iterative technique that alternately runs an MC electronic simulation and solves the heat diffusion equation using an...
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