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In this paper we discuss small-geometry MOSFETs with gate lengths below 0.1 μm and talk about the limits to the down-sizing of MOSFETs. We also consider future ULSIs containing such ultra-small-geometry MOSFETs.
In this paper, the correlation between noise figure degradation and the degradation of DC characteristics during emitter-base reverse stress is studied. It was found that the generation-recombination centers, which introduce emitter-base reverse stress, have an influence on high-frequency noise characteristic degradation.
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