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The appearance of “cooling” phenomena in the noise temperature spectrum is presented. The results are obtained in the framework of two, hydrodynamic and Monte Carlo, models of carrier transport and related electronic noise description in the channels of FET and MOSFET structures. The cooling effect was obtained under excitation of 2D-plasma waves in the gated region of the channel due to streaming-plasma...
Theoretical investigation of the impact ionization and accompanying effects in InP submicron MOSFET/HEMT channels is performed by Monte Carlo Particle (MCP) simulation coupled with pseudo-2D Poisson equation. Main attention is paid to the low-frequency microwave noise. It is shown that there takes place a sharp growth of the excess low-frequency noise near the threshold of the development of the instability...
High electron-mobility transistors can be used as efficient detectors of an incident THz radiation on its metallic electrodes. This detection can become strongly resonant if the frequency of the THz radiation coincides with plasma eigenfrequencies of the transistor channel. By using a hydrodynamic model we investigate in parallel the transistor intrinsic high-frequency current noise spectrum and its...
A generalization of the approach which describes the emission capabilities of micron and submicron semiconductor structures in terms of the spectrum of thermally non-equilibrium noise/emission temperature is considered for the case of three-terminals FET/HEMT structures. By using, in the framework of hydrodynamic approach, a direct numerical modeling of the frequency dependence of the components of...
The possibility to develop a novel technique that might provide a direct measurement of the impedance field using an electromagnetic near-field equipment is investigated. Preliminary experiments have been performed on silicon substrate using a coaxial near-field probe. The first results show a signal transmission via an air coupling and not a propagation inside the device. Some critical problems have...
A theoretical model based on simple hydrodynamic equations coupled with a pseudo-2D Poisson equation is used to calculate numerically and to analyze analitically electronic noise in FET/HEMT channels induced in the THz frequency range by the thermal excitation of 2D-plasma waves. The influence of ungated regions on high-frequency (HF) noise is considered. An efficient suppression of HF noise is found...
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