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The appearance of “cooling” phenomena in the noise temperature spectrum is presented. The results are obtained in the framework of two, hydrodynamic and Monte Carlo, models of carrier transport and related electronic noise description in the channels of FET and MOSFET structures. The cooling effect was obtained under excitation of 2D-plasma waves in the gated region of the channel due to streaming-plasma...
We propose an analytical approach for the admittance response calculation of the high mobility InGaAs channel transistors. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent small-signal admittance response is determined by the total currents...
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