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Our previous work analytically establishes that silicon-on-nothing (SON) is superior to silicon-on-insulator MOSFET because of its higher immunity to different short-channel effects and increased current driving capability. Moreover, it has also been shown that our analytical model agrees with various simulation results obtained from MEDICI, ATLAS 2-D, and so on. Because of the ultrathin device structure,...
A simple small-signal equivalent circuit for generalized horizontal SOI and SON MOSFET has been presented Hie intrinsic parameters of the small-signal model are obtained from a compact capacitance based analytical model Using those small-signal model parameters, frequency dependent performances of those structures are simulated with SILVACO SMART SPICE RF Module. It has been realized that SON technology...
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