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In this paper, the impact of wafer thinning on 20nm High K Metal Gate (HKMG) technology is evaluated. Fully fabricated test wafers are thinned down to well below 100μm, into the range required for 3D integration. The impact on NMOS and PMOS device performance parameters; channel current and threshold voltage (Vt) is investigated. Device reliability is monitored using NBTI (negative bias temperature...
This paper reports a novel chip-to-wafer (C2W) three-dimensional (3D) integration approach using a template for precise alignment. The key unit process steps, including template fabrication, chip edge definition, C2W alignment and bonding, are investigated. To demonstrate this C2W approach, benzocyclobutene (BCB) and Cu are selected as the starting materials for template and bonding, respectively...
3D integration is expected to lead to a semiconductor industry paradigm shift due to its tremendous benefits to performance, data bandwidth, functionality, heterogeneous integration, power and cost. In this work, we consider the case where solder balls and through-strata-vias (TSVs) are paired to electrically connect stacked chips in a vertical fashion. For the given solder-TSV configurations, transient...
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