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This paper reports on an innovative in-band linearity performances characterization dedicated to nonlinear RF power amplifiers, here, pre-matched MASMOS® power amplifier. It consists of a generic multi-tones test signal that emulates the statistical properties of the applicative signal and allows signal and intermodulation output component separation for in-band C/I (signal to intermodulation power...
A significant improvement is demonstrated in the measured pulse-to-pulse stability of an S-band 6 W GaN high electron mobility transistor (HEMT) power amplifier by generating an appropriate pulse of the gate bias and thus a warm-up drain current just before each radio-frequency (RF) pulse of a periodic and coherent radar burst. The amplitude and the width of this gate bias pulse preceding each periodic...
This paper presents the design of a GaN HEMT based boost DC/DC converter and a dynamic supply modulator suitable for DC to RF power conversion improvements in RF transmitters. This work addresses a contribution to energy efficiency enhancements of active phased-array antennas. A main aspect reported here concerns a circuit implementation of a boost converter and its specific gate driver in GaN technology...
This paper focuses on the time domain envelope measurements based analysis of power amplifiers in order to improve both linearity and efficiency of microwave transmitters. First of all, a versatile time domain envelope test bench is presented. Then, two applications related to those RF PA measurements are reported. The first application concerns linearity characterization that can be specified in...
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