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This paper presents a SiGe transmitter chip for short-range devices in the 61 GHz ISM frequency band. The presented transmitter consists of a fundamental VCO, a PA, lumped element Wilkinson-Dividers and a static divide-by-16 chain for stabilization in a PLL. Two variants of the transmitter are fabricated with supply voltages of 3.3 V and 5 V in a modern 130nm SiGe BiCMOS technology with HBTs offering...
<?Pub Dtl?>In this paper, a miniaturized D-band frequency-modulated continuous-wave (FMCW) radar sensor with 48-GHz bandwidth (32.8%, 122–170 GHz) and a high measurement rate of kHz for multi-target vibration measurements is presented. The sensor is based on a SiGe transceiver monolithic microwave integrated circuit manufactured via Infineon's B7HF200 bipolar production technology...
This paper presents an ultra-wideband single-chip radar transceiver MMIC around 240 GHz in a SiGe:C bipolar laboratory technology with an fT of 240 GHz and fmax of 380 GHz. The presented transceiver architecture consists of a fundamental 120 GHz VCO, two 240 GHz frequency doublers, a fundamental 240 GHz down-conversion mixer, a divide-by-four stage, a PLL-mixer and two on-chip patch antennas. The...
This paper presents two differential signal source chips for 150 GHz and 220 GHz in SiGe:C bipolar technologies. The presented architectures consist of a fundamental VCO with a frequency doubling output stage based on the differential Gilbert-Cell. The 150 GHz chip is fabricated in a production technology with an fT of 170 GHz and fmax of 250 GHz, the 220 GHz in an advanced laboratory technology with...
This paper presents an ultra-wideband signal source chip for the D-Band in a SiGe:C bipolar production technology with an ƒT of 170 GHz and ƒmax of 250 GHz. The presented architecture consists of a fundamental VCO with a frequency doubling output stage. The goal of this work is to achieve a signal source near the technologies cut-off frequency while providing good performance concerning phase noise,...
In this paper a monostatic fully integrated singlechannel SiGe transceiver chip around a center frequency of 24 GHz is presented. The architecture consists of a fundamental VCO, a receive mixer, a divider chain, and coupling/matching networks. All circuits, except for the divider, are designed with the extensive use of on-chip monolithic integrated spiral inductors. The chip is fabricated in a SiGe...
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