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We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential...
An adequate gate coupling ratio (GCR) and compensation for floating-gate to floating-gate (FG-to-FG) coupling interference must be maintained to enable further scaling of virtual-ground multilevel-cell (MLC) FG flash memory. A high GCR of 0.6 is obtained using a novel bowl-shaped FG structure cell technology without sacrificing cell size. Increasing the GCR is important for reducing FG-to-FG coupling...
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