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The SiC normally-on JFET is a new member in the family of power devices. It is reliable and robust under high-temperature and high-voltage harsh operatioing conditions due to its pn-junction gate control and the excellent physical and electrical properties of Silicon Carbide. At present, 1200V SiC normally-on JFETs are commercially available and higher voltage JFETs are still under development. There...
Excellent physical and electrical properties of SiC material make SiC JFETs extremely attractive for high power density, high temperature and high frequency power applications. With increased switching speed, a stable operation capability of the devices under unclamped inductive switching (UIS) conditions is critical for the reliable operation of power switching systems. In this work, the behaviors...
There is a growing demand for medium voltage, 6.5 – 24 kV, switches capable of operating at more than 15 kHz frequencies. The range of potential applications includes grid-tied solar inverters and pulsed-power applications, where the conventional silicon thyristor technology is plagued with slow switching speeds at medium blocking voltage requirements. In this paper we present the design and characterization...
This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC–DC power converters at high frequencies is discussed.
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