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In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of...
Recently, minimizing the standby power is considered as a critical issue in high-density, mobile CMOS technology. One of the major sources of the leakage current in off-state of ultra-small MOSFET is gate-induced drain leakage (GIDL) which is mainly composed of inter-band and trap-assisted tunneling. By virtues of reduced intra-junction and punch-through leakage currents, threshold voltage controllability,...
A SONOS flash memory having locally-separated vertical channels is investigated. The vertical SONOS flash memory has a scaling issue related with the fin width. As the fin width is shorter, electrical interference between paired cells (PCI) is severer. To overcome PCI, we propose the locally-separated vertical channel SONOS (LSVC SONOS) structure. We demonstrate reliable operation of LSVC SONOS using...
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