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NFinFET devices with channel length 100nm and 120nm fabricated on SOI (silicon on insulator) wafers are measured to show ID-VG and ID-VD characteristic curves. ID-VG characteristic curves demonstrate suppressed Ioff's associated with Drain Induced Barrier Lowering (DIBL) and Punch-through effects. ID-VD characteristic curves are then roughly fitted by using the traditional current-voltage formula...
Deeply understanding how FinFET transistors behave causes a lot of interest and attentions. Mostly, the current, IDS, flows through the strongly-inversed layer about hundreds of angstroms in the channel of an enhancement-mode MOSFET device as a bias exceeding the threshold voltage is applied to Gate. As for FinFET devices, there are two features that are intriguing. For one thing, the leakage current...
Miniaturizing chip circuits in IC design is one of chief targets to promote chip production. However, accompanying the parasitic capacitance perhaps degrades the circuit performance. Here, a cascode low-noise amplifier (LNA) circuit incorporating parasitic capacitance of passive inductors was designed at 2.4GHz carrier frequency with low-cost and high-integration 0.18μm CMOS process. The Advanced...
Through the assistance of Zeland IE3D software simulation, a high performance of a scoop-shape antenna integrating a monopole type and a PCB board using FR4 material as a substrate was fully and successfully represented. The relative dielectric constant of this FR4 material is 4.35 and its thickness in PCB board application is around 1mm. After the fabrication and the attentive measurement with Agilent...
The cascade LNA circuit adding parasitic capacitance (Cp) for neighboring passive inductors at 2.4GHz with low-cost and high-integration 0.18μm CMOS process was designed and studied. The simulation results adopting an ADS software as a simulator demonstrated the forward voltage gain is 11.908dB, the input return loss is -9.563dB, the output return loss is -21.153dB, the reverse isolation is -16.315dB,...
Devices fabricated through TSMC 0.18 micron CMOS process are modeled and implemented in Agilent ADS for the circuit designs. Two low-noise, well impedance-matched radio frequency amplifiers working at various nearby center working frequencies, 2.6 GHz and 2.8 GHz, are proposed using Class-E power amplifier mechanism. Both are deliberately put in series such that both can couple with each other, The...
FINFET devices have generated an alternative convincing next-generation foundation in IC industry. The outrageously leaky Ioff current gets controlled as the channel length is imperatively shortened down to 40nm and below. Somehow, the 3-dimensional fin structure makes itself distinct from the traditional MOSFET transistors, e.g., the threshold voltages (Vt). In some channel lengths, Vt may turn to...
FINFET devices have demonstrated convincing low leaky Ioff current for the last decade and continue to take the leading role approaching to 10nm channel length. The imperative must for the next generation MOSFET transistors with 3-dimensional fin structure overwhelmingly replace the traditional MOSFET ones. However, the threshold voltages (Vt), in some cases, may turn out to be negative on NFINFET...
Nano-process MOSFET devices are considered to be upgraded by strained engineering technique. Mismatched lattice constants between SiGe and silicon is used to form global strain over the whole devices, while silicon nitride as contact etching stop layer (CESL) is applied to the top of the devices to squeeze the devices uni-axially. Both are found to be capable of enhancing the electrical properties...
The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization...
Increasing the electrical performance of the MOSFETs with contact etch stop layer (CESL) and SiGe channel technologies in strain engineering is indeed approached. Using silicon capping layer performs the benefits on the smoothness of channel surface and the prevention of germanium penetration from SiGe layer. In this study, the deposited capping layer thicknesses with SiGe channel of (110) substrate...
An alternative technique to improve the electric performance of shrunk MOSFET devices is strained engineering. Considering SiGe channel layer as a global strain capping a Si layer to prevent Ge diffusion from the SiGe channel layer and soften the stress between SiON gate dielectric and SiGe channel is a possible way. To favor NMOSFET, depositing silicon nitride on gate as contact etching stop layer...
An operation in 1.8V supply voltage single-ended cascode low-noise amplifier (LNA) structure was launched. This designed circuit provided the lower noise figure and matched the suitable LC tank to enhance the central operating frequency as well as the excellent input and output impedance matching incorporated into this LNA circuit. In this simulation, the Agilent ADS (Advanced Design System) simulation...
Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion...
Mismatched lattice constants between SiGe and silicon can cause the strain making the mobility improved. SiGe are grown underneath the channel apparently to form global strain over the whole devices, while Source/Drain refilled with SiGe would squeeze or pull up the devices uni-axially. The ID-VG characteristics curves and the maximum trans-conductance (gm) using strain engineering are observed to...
Channels of FinFET are 3 dimensional fin-like structures which are thin enough to be fully depleted as the gate is appropriately biased leaving no leaky neutrally-charged leaky body. Different widths (fin thickness), different gate materials, and the Vt-adjustment using different implant energies are taken into account in this paper. It is then found that different fin thicknesses do affect the electrical...
The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different...
FinFET devices have the structure of 3-D fins as channels, which are capable of being fully depleted as the gate is biased and potentially suppress the leakage currents. In this paper, one compares poly-silicon gates with fully cobalt silicide gate to see how much they are affected by the fin widths. Two channel lengths (0.1 micron and 0.12 micron) at two different fin widths (namely, 110nm, and 120nm)...
Strained Engineering including both global and local strains effectively enhances the mobility of carriers, in which global strains are generated by the mismatching of lattice constants at the junction of Si and Si0.775Ge0.225 and local strains are aroused by Source/Drain refilled with SiGe. In this paper, junction breakdown voltage, punch-through voltage, and the variation of threshold voltages are...
The leakage current is suppressed on 3-D structural fin-like channels of FinFET as the sizes of devices get substantially shrunk. The devices with channel width/length (0.12μm/ 0.10μm) are focused on and the baseline device is taken to be 15KeV phosphorous ions (the precursor PH3) for N-well Vt implant and heavily doped poly-silicon for the gate. One is thus intrigued in what if the Vt implant energy...
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