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The state-of-the-art and π-models for the lateral non-quasi-static (NQS) effect are analyzed. The superiority of the π-model to capture the lateral NQS effect is demonstrated through small-signal simulations of both the models, implemented in Verilog-A. A hybrid model is proposed and a corresponding formulation of the base impedance is obtained. The equation gives the base impedance of the state-of-the-art...
Detailed formulations for DC and AC emitter current crowding are presented in view of developing an extended π-equivalent circuit (EC) model to accurately predict the lateral non-quasi-static effects in silicon germanium heterojunction bipolar transistors. Under negligible DC current crowding, the EC reduces to a simple π-model. The implementation-suitable versions of the models are also developed...
Time-dependent quantum simulations are used to rigorously identify non-quasi-static (NQS) effects in Carbon nanotube transistors. A complete physics-based small signal equivalent circuit is derived which captures important NQS effects for circuit design and simulation. This model agrees well with high-frequency measurements. Additionally, the impact of Schottky barriers on the kinetic inductance and...
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