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We study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavity photoconductors, designed for THz optoelectronics applications using 1550 nm pulsed lasers. We present here, as a proof of concept, the under-sampling of continuous RF waves up to 67 GHz.
Heterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level radiometric detection. We have measured the microwave performances of HLBD from DC to 220 GHz. A responsivity of...
It is shown from accurate on-wafer measurement that a low-temperature-grown GaAs photoconductor using a metallic mirror Fabry-Perot cavity can serve as highly efficient optoelectronic heterodyne mixer in the terahertz frequency range. Conversion losses of 22 dB at 100 GHz and ∼27 dB at 300 GHz were measured, which is an improvement by a factor of about 40 dB as compared with the previous values obtained...
A dual-frequency laser coupled to a unitravelling carrier photodiode is used to produce a highly coherent THz wave. THz signal is detected by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature and no active stabilization is used. The measured linewidth is better than 30 kHz and tunable from DC to 1 THz. The dynamic...
We report the continuous wave generation delivered by on ion-irradiated In0.53Ga0.47As photomixers coupled to transverse-electromagnetic-horn antenna using two lasers operating at ~1.55 μm wavelength. Output powers up to 0.1 μW at 700 GHz have been achieved. The output power in a regime of Ohmic transport or recombination-limited transport is analyzed.
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