Heterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level radiometric detection. We have measured the microwave performances of HLBD from DC to 220 GHz. A responsivity of 1700 V/W for unmatched diodes with a very low differential resistance of 256 Ω has been measured. A noise equivalent power (NEP) of about 1.3 pW/Hz1/2 was then deduced. These performances make our diode easy to matched with 50 Ω circuits and particularly interesting for low-level sub-THz detection applications.
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