This paper presents high-efficiency Unitravelling carrier photodiodes for THz communications. Using high-level modulation schemes, QAM-16 and 32 Gbit/s data-rate is obtained using these devices, that combine high power level and linear behavior, mandatory for high-spectral efficiency data links in the THz range.
We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic photoresponse properties have been measured by means of a photomixing experiment up to 67 GHz, showing the potential of this device for GHz and THz applications.
Heterostructure low barrier diode (HLBD) based on AlGaInAs has been designed, fabricated and characterized for zero-bias millimetre-wave detection. Detectors with different heterostructures and various active areas have been tested in order to optimize their characteristics for low-level radiometric detection. We have measured the microwave performances of HLBD from DC to 220 GHz. A responsivity of...
This Letter reports on new experimental high dynamic range sub-sampling performances obtained from nanoscale microwave photoconductive switches operating under a 0.8 μm wavelength pulsed illumination. Experimental results have been performed on different samples benefiting of a low temperature grown Gallium Arsenide absorbing layer on GaAs substrate, coplanar microwave electrode profile optimisation,...
It is shown that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Pérot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers.
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