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The results of experimental researches of protective properties of screens on the basis of coverings Bi/Sb and composite tungsten-copper (W75Cu25) at 1.8 MeV electron irradiation of microcircuits of programmable ROM 256 K are submitted. It is found that application of these coverings allows increasing hardness of ROM to 1.8 MeV electron radiation by factor of 13???16 to fluences Fe = (3 ?? 6)??1014...
The results of experimental researches of radiation resistance of VLSI Ferroelectric Random Access nonvolatile Memory (FRAM) at influence of gamma-irradiation Co60 are submitted.
The results of experimental researches of protective properties of screens on the basis of multilayered metal coverings Bi/Cu and alloys PbSn under electron irradiation with 4 MeV energy of silicon diode n+-p-structures are submitted.
The results of experimental researches, methods of prediction and increase of radiation resistance of logic CMOS integrated microcircuits, MOS memory microcircuits ?? electrically erasable programmable read only memories (EEPROM), and also insulated gate bipolar transistors (IGBT) are presented.
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