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This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices,...
In this paper, it is the first time that the effect of self-heating of LDMOS transistors operating in the so-called expansion regime of the output characteristics is studied. Experimental characterization and numerical simulations are used to demonstrate that, in order to explain the origin of the current enhancement phenomenon observed in the output characteristics of LDMOS transistors biased at...
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