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A low oxygen content (LOC) CuAl alloy with no barrier metal (Ta) oxidation was obtained using an oxygen absorption process based on metallurgical thermodynamic principles. LOC CuAl dual damascene interconnects (DDIs) were successfully implemented into 45-nm-node LSIs with 140-nm-pitched lines and 70-nm-diameter (phi) vias. An oxygen absorber of very thin Al film, which was deposited on an electrochemically...
By a novel oxygen absorption process, low oxygen-content Cu-alloy is implemented for fully-scaled-down, 45 nm-node dual damascene interconnects (DDIs) with 140 nm-pitched lines and 70 nmOslash-vias. In this process, a very thin metal film as an oxygen absorber, which has larger negative change in the standard Gibbs free energy of oxidation than a barrier metal, is put on a natural oxide at a surface...
We used an optical beam induced resistance changes (OBIRCH) method to analyze defects in 0.10-/spl mu/m-wide Cu lines. Narrower lines and higher annealing temperatures strongly increased the defects probably due to Cu film agglomeration in very narrow line trenches. SiC capping of Cu lines reduced the numbers of defects drastically. Capping material is a key factor for 0.10-/spl mu/m-wide, Cu metallization.
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