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In recent years, technology-assisted review (TAR) has become an increasingly important component of the document review process in litigation discovery. This is fueled largely by dramatic growth in data volumes that may be associated with many matters and investigations. Potential review populations frequently exceed several hundred thousands documents, and document counts in the millions are not...
This paper presents a probabilistic technique for identifying support surfaces like floors, walls, stairs, and rails from unstructured 3D point cloud scans. A Markov random field is employed to model the joint probability of point labels, which can take on a number of user-defined surface classes. The probability of a point depends on both local spatial features of the point cloud around the point...
At intersections and in merging traffic, intelligent road vehicles must solve challenging optimal control problems in real-time to navigate reliably around moving obstacles. We present a complete planner that computes collision-free, optimal longitudinal control sequences (acceleration and braking) using a novel visibility graph approach that analytically computes the reachable subset of path-velocity-time...
Automated emergency maneuvering systems can avoid or reduce the severity of collisions by taking control of a vehicle away from the driver during high-risk situations. To do so, these systems must be capable of making certain decisions: there is the choice of when to interfere in the driver's control, which is made challenging in the presence of dynamic obstacles and uncertain information (such as...
Vehicles that cross lanes of traffic encounter the problem of navigating around dynamic obstacles under actuation constraints. This paper presents an optimal, exact, polynomial-time planner for optimal bounded-acceleration trajectories along a fixed, given path with dynamic obstacles. The planner constructs reachable sets in the path-velocity-time (PVT) space by propagating reachable velocity sets...
A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain
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