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In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nanowire transistors with cylindrical cross-section within the effective mass approximation. The Hamiltonian is expanded in the uncoupled mode space and the nonequilibrium Green's function (NEGF) formalism is adopted to calculate the electron density and current. An approximated isotropic effective mass is...
This paper presents a numerical study of quantization effects in gate-all-around nanowire transistors with circular cross section. The model is based on the self consistent solution of Schrödinger and Poisson equations. The eigenenergies and wavefunctions were first verified analytically whenever possible. Electron distribution profiles, body and surface potentials and capacitance characteristics...
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