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Historically, the mobility of semiconductor charge carriers is treated as a single-valued function of temperature and other parameters such as the doping concentration. Such a description has been adequate for electronic devices with behaviors that are dominated by bulk carrier transport. Treating carrier mobility as a single valued function is consistent with conventional Hall measurements which...
We report on an experimental study of the intersubband optical response of an In0.5Ga0.5As/GaAs quantum dot solar cell (QDSC). By calculating the quantum dot absorption cross section, the strength of the intersubband optical transitions is gauged, and their importance and influence on the electrical properties of the solar cell can be compared with those of other physical processes such as thermal...
An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.
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