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A quarter-micron optical gate, enhancement / depletion (E/D)-mode pseudomorphic high electron mobility transistor (pHEMT) has been developed. The E-mode FET shows high extrinsic transconductance (830mS/mm) and high cut-off frequency (73GHz). The 8×50µm device operating at Vds = 1.8V and Ids = 50 mA/mm also demonstrates a low noise figure of 0.83dB and a high gain at 12 GHz. Linearity shown in IP3...
A low cost, high yield, superior performance pseudomorphic high electron mobility transistor (pHEMT) technology is developed for handset switch application. This technology adopts a novel FET unit cell together with an optimized epi structure. The FET unit cell adopts the full periphery design to reduce FET footprint and improve isolation without increasing on-resistance (Ron). The optimization of...
A production ready pseudomorphic high electron mobility transistor (pHEMT) using i-line 0.25 mum optical gate lithography has been developed for both Ka- and Ku-band power applications. These 0.25 mum Ka- and Ku-version pHEMT devices demonstrate state-of-the-art power performance at 29 and 10 GHz, respectively. Excellent reliability has been achieved at channel temperature exceeding 275degC. Yield...
The gate geometry of PHEMT determines the upper limit in microwave and millimeter-wave frequencies at which the transistor can be optimally useful as amplifiers. In addition to production of 0.5 mum and 0.15 mum feature gate length PHEMT on 150 mm GaAs wafer substrate, WIN has recently developed the 0.25 mum variety targeting mmic solutions covering from below X-band to frequency as high as 60 GHz...
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