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We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.
A compact model for SiC Power MOSFETs has been presented. The model has been validated with measurements from commercially available 1200V, 20A SiC power MOSFETs. The model features temperature scaling from 25°C to 225°C, which is the operating temperature for the new devices. In order to improve the user's experience with the model, a new datasheet driven parameter extraction strategy has been proposed...
The characterization and device physics study of a lateral DMOS transistor in the cryogenic regime (~ + 20 degC to - 180 degC) is presented in this paper. Normally, the characteristics of lateral MOSFETs improve with decreasing temperature. However, the asymmetrical nature of LDMOS devices, owing to the presence of a lightly doped drift region, causes the behavior to deviate from the expected characteristics...
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