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This work describes a silicon-carbide (SiC) based, micromachined harsh-environment pressure sensor that utilizes concentrically matched differential capacitance output (DCO) to transfer relatively small capacitance changes through very long cables and reduce signal noises. By utilizing the concentrically matched capacitance (CMC) design, sensors with DCO can be fabricated by a newly developed SiC...
In this paper, we demonstrate the stable operation of integrated 4H-silicon carbide (SiC) diode bridge rectifier circuits at high temperature up to 773 K for the first time. The turn-on voltages of the fabricated 4H-SiC pn diode are 2.6 V and 1.4 V at room temperature and 773 K, respectively, with a low shifting rate of 2.2 mV/K. The integration of the 4H-SiC diode bridge rectifier circuit was achieved...
Superior performance of the Silicon Carbide (SiC) semiconductor in high temperature and harsh environment is widely known. However, utilizing the Vertical Channel 4H-SiC JFET (SiC JFET) for analog design exhibits significant design challenges, even at room temperature. The fundamental challenges are low intrinsic gain, the limitation of the Gate to Source Voltage Range (GSVR), and restrictions on...
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