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The stress sensing system, which has been developed recently, allows measuring the magnitudes and the distribution of mechanical stresses induced in the silicon dies during fabrication and testing of the electronic packages. The studies already presented in the last years focused on the effects of temperature cycling, 4-point-bending, moisture swelling, and molding. This paper reports the results...
In this paper the residual stress in single-crystalline Si around W-filled TSVs was determined experimentally by three methods with high spatial resolution and compared to one another. In contrast to Cu as TSV filler, W has the potential advantage of a lower CTE mismatch to Si resulting in lower thermally induced stress at the TSV-interface. As test layout a cross-sectioned double-die stack was used...
One major challenge for power and microelectronics system integration today is the assurance of reliability, very often mastered by a carefully tuned interplay of the still dissimilar materials that make up a package, first under optimized processing conditions, and then often under combined loading conditions. Therefore, not only during design but also during test and operation it would be desirable...
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