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This paper presents our recent work towards state-of-the-art integrated test concepts for the in-situ characterization of silicon-integrated millimeter-wave devices and transceiver components for radar and communication applications. Narrowband as well as ultra-broadband integrated network analysis solutions for a variety of frequency bands ranging from 50 to 120 GHz are outlined. In this context,...
This paper presents a cross correlation based synchronization architecture between the clock of the receiver and the transmitter for ultra-wideband radio systems. The designed architecture is based on M-sequence signals instead of the conventional impulse signals. The M-sequence generator and the analog correlation circuit are fabricated on chip using a low cost 0.25µm 95GHz fmax SiGe-HBT-BiCMOS process...
This paper presents two fully integrated differential programmable power amplifiers for automotive radar applications at 77GHz. The power amplifiers were fabricated in a silicon-germanium technology featuring bipolar transistors with an ft/fmax of 200GHz/250GHz. Measurements have been performed for different temperatures, in particular at −40°, 27° and 125°. A maximum gain of 10 dB is achieved for...
This paper presents an overview of state-of-the-art read-out circuits for integrated millimeter-wave reflectometers in silicon technology. Different architectures based on homodyne or heterodyne lock-in detection, six-port passive networks, and sampled-line approaches are introduced and their respective circuit implementations are presented. Furthermore, the application potential of these integrated...
This paper presents two fully integrated differential programmable power amplifiers for automotive radar applications at 77GHz. The power amplifiers were fabricated in a silicon-germanium technology featuring bipolar transistors with an ft/fmax of 200GHz/250GHz. Measurements have been performed for different temperatures, in particular at −40°, 27° and 125°. A maximum gain of 10 dB is achieved for...
This paper presents a wide tuning range modified Colpitts VCO with high output power. The circuit was fabricated using a lowcost SiGe technology with an ft/fmax of 170/250 GHz. The VCO can be tuned between 56.4 and 73.8 GHz having a tuning range of ≈ 27%. The maximum measured output power is +9.4 dBm, and the output power remains above +7.0 dBm over the entire tuning range. The VCO has a minimum phase...
In this paper the design of integrated passive and active circuits in silicon by use of rigorous electromagnetic analysis. A broadband directional coupler has been designed with large bandwidth at 110 GHz center frequency and measured from 20 to 140 GHz. The simulation is compared to measurement showing very good agreement. A VCO has been designed at 116 GHz center frequency. The measurement of the...
The key benefits of the six-port receiver architecture are its high bandwidth and low circuit complexity. This concept has been known on the one hand for precise phase measurement applications and on the other hand for complex valued data reception in the millimeter wave region. The work presented here shows a new approach for combining both principles in one six-port receiver. A method for simultaneous...
In this paper directional couplers with reduced size, by lumped elements, inverted microstrip, and broadside coupled lines at 61, 110, and 122 GHz center frequency and up to 156-GHz bandwidth have been designed. The couplers show an isolation up to 40 dB. Different SiGe BiCMOS technologies with 250-nm and 130-nm feature width and 5 to 7 metal layers have been used. The measurement results have been...
The temperature behavior of a high speed direct digital synthesizer with a maximum clock frequency of 16.8 GHz and a power consumption of 488 mW at room temperature is investigated. The DDS has been manufactured in a 200-GHz ft SiGe bipolar technology and occupies a chip area of 1.15 mm2. A subsampling approach is introduced to analyze the output spectrum of the DDS. A calibration is performed over...
This paper presents the design of single-ended, double stage cascode low noise amplifiers at 120 GHz. A design methodology employing three techniques for gain enhancement of the LNA is presented. The effect of traditional emitter - degeneration technique and its feasibility for simultaneous noise and power matching is evaluated at 120 GHz. The LNAs are designed in a 250 GHz fT and 300 GHz fmax 0.13...
Two phase accumulators with 10 and 8 bit resolution, 7 and 15 GHz maximum clock rate, and a power consumption of 237 and 302.5 mW for use in direct digital synthesizers are presented. The accumulators are designed to retain phase coherency when a frequency switch is performed and are integrated into a DDS to perform simple measurement. The architecture is described, the circuits analyzed and measurements...
A direct digital synthesizer (DDS) with 6-bit amplitude and 8-bit phase resolution is presented. The phase-to-amplitude mapping circuit is implemented as a differential pair in saturation. The suitability of this circuit for broadband application and high temperature range is shown. The use of a modern SiGe bipolar technology enables both a low power consumption of 366 mW and a high clock frequency...
In this paper the analysis, design and characterization of a fully integrated multi purpose m-sequence generator for UWB radar signal generation and broadband power amplifier testing is presented. The generator can generate m-sequences of 511 bits length up to data rates of 25.52 Gb/s. A mixer is included to shift the spectrum to higher center frequencies to fit into FCC or ECC UWB masks. The generator...
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