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Summary form only given. Remote plasma chemical vapor deposition (RPCVD) is being used to form silicon nitride films. In the RPCVD process, high-energy ions and electrons do not come into contact with the silane reactant. Previous researchers have indicated that this is important for the formation of low-hydrogen-content silicon nitride films and is the key difference between remote plasma deposition...
Summary form only given. The RF discharge dissociation in N2 O in a parallel-plate reactor was measured by downstream mass spectrometry. A wide range of gas flows and powers at 10 kHz and 13.56 MHz was used. It was found that the mass 44 signal (N2O+), which is a measure of the amount of undissociated N2O, is a function of the discharge input energy per N2O molecule (eV/N 2O). The amount of dissociation...
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