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We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar...
We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar...
In this paper, we report the catalyst-free growth of nanowires utilizing selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) and their application to FETs. InAs nanowire FETs with Schottky gate resulted in large gate leakage current. But the leakage current was suppressed by using a MIS gate structure, and good saturation characteristics as FET were obtained.
We report on the fabrication of the highly uniform hexagonal nanopillars with single InGaAs/GaAs quantum well (QW) on the GaAs (111)B substrate by selective-area metal organic vapor phase epitaxy. The standard size deviation of the fabricated nanopillars with single InGaAs/GaAs QW is about 2% and the standard deviation in their height about 5%. The excitation-power-density-dependent micro-photoluminescence...
Si-doped InP NWs were successfully fabricated by SA-MOVPE. PL measurements were carried out on Si-doped InP NWs. From the PL peak position caused by band-filling effect, we estimated the electron concentration in Si-doped InP NWs.
Time- and spectrally-resolved PL from a periodic array of InP/InAs/InP core-multishell nanowires is presented. InAs layer shows multipeak PL spectra. PL decay is nonexponential and very slow, with decay rate depending on energy.
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