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In this paper, a comprehensive simulation study is conducted to investigate the switching characteristics, gain, and breakdown voltage of a GaN–AlN–(4H)SiC based optically-triggered (OT) heterostructure vertical power semiconductor device (PSD). It comprises a 1nm AlN buffer layer between the GaN and SiC heterointerface to achieve a reasonable compromise between lattice mismatch and lower forward...
In this work, we report the characterization results of GaN/4H-SiC heterojunction vertical pn power diode. The diode is realized using four separate epitaxial growth mechanisms: a) direct growth of p-GaN over n-(4H)SiC; b) growth of p-GaN over n-(4H)SiC with AlN as the interface layer; c) growth of p-GaN over n-(4H)SiC with Ga-flux as the interface layer; and d) growth of p-GaN over p-(4H)SiC. The...
In this paper, an atomistic molecular dynamics followed by an electrical simulation study is made to study the turn-on and turn-off characteristics, gain, and breakdown voltage of an optically triggered GaN/4H-SiC hetero-structure vertical NPN device with 1 nm AlN as the buffer layer and the results are compared with the optically triggered all-4H-SiC NPN device. The optically triggered GaN/4H-SiC...
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