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A compact MOSFET I-V model is developed based on quasi-ballistic transport theory, using a more accurate method to calculate the effective stress and its impact on all strain-dependent parameters. This model is verified using published 40 nm-Lg CESL-strained nMOSFET data, and can be used to predict layout-dependent variations and future-generation device performance trends.
6T-SRAM cell designs for the 22 nm node are compared via full 3-dimensional cell simulation with Sentaurus (v.2008.09), to allow the benefits of advanced MOSFET structures to be accurately assessed. Segmented MOSFET (SegFET) technology provides for enhanced read stability and write-ability, as compared to conventional planar and tri-gate technologies. It also provides for improved SRAM cell yield,...
A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for devices with a 20 nm gate length. For identical nominal body and source/drain doping profiles and layout width, the trigate bulk MOSFET shows less threshold voltage (Vth) lowering and variation. RDF effects are found to be caused primarily...
Atomistic 3D device simulations of 20nm-gate-length planar vs. tri-gate bulk MOSFETs with identical nominal retrograde-well and source/drain doping profiles show that the tri-gate structure is more robust to random dopant fluctuation (RDF) effects, i.e. threshold voltage (VTH) lowering and variation. VTH lowering is verified to be due primarily to channel/well RDF. For the tri-gate bulk MOSFET, VTH...
Multi-gate devices are expected to enable continued scaling beyond the 32nm node in part due to their improved gate control of the channel versus planar MOSFETs. Static random access memory (SRAM) scaling, which requires increasing design margins despite decreasing layout area, may motivate the transition to a multi-gate architecture. Tri-gate bulk devices are an attractive multi-gate option because...
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