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We review our achievement in monolithic 3D-ICs based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. With pulsed-laser crystallization, Si grains with a diameter of 6 μm are successfully formed on predetermined positions. Single-grain (SG) Si TFTs are fabricated inside the single-grain with mobility for electron and holes of 600 cm2/Vs and 200 cm2/Vs,...
We studied pulsed laser induced epitaxy of silicon using a seeding wafer to realize location-and orientation-control of silicon grain. Silicon grains as large as 4 μm × 4 μm with mostly the preferred (100) orientation area were obtained on top of contact openings through SiO2 to seeding silicon (100) wafer. The orientation of the seed is inherited by a-Si during the solidification phase of molten-Si...
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