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A CMOS-MEMS polysilicon/metal thermopile with low thermal conductance and a high emissivity in 8-14 μm is presented in this letter. Instead of a traditional aluminum layer with a high thermal conductivity, a titanium film was compatibly introduced to the CMOS process to highly decrease the solid conductance and enhance the responsivity of the infrared sensor. In addition, the solid conductance was...
The purpose of this paper is to study the heavily boron-doped effect on the etch rates of boron-doped <;111> single-crystal silicon in different TMAH solutions. The boron atoms were heavily doped in <;111> single-crystal silicon by using diffusion process. We change the pre-deposition time and annealing time of diffusion process to form different concentration distributions. The samples...
In this paper, we present a 0.8-μm 1P2M CMOS process compatible polysilicon/titanium thermopile with a gold black absorption layer. Instead of an aluminum layer of 0.6 μm thickness in the first metallization process, a titanium layer of 0.1 μm thickness was introduced to the fabrication of a CMOS compatible thermopile in order to enhance sensitivity by lowering the thermal conductance of the sensor...
Suspended structures are frequently used in some micro-electro-mechanical system (MEMS) devices. They are usually protected and supported by silicon oxide. Because the suspended structures are released from the silicon substrate in various etchants, the etch resistivity of the oxide layer is very important for suspended structure fabrication. In this paper, we improve the etch resistivity of low temperature...
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