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The optimal performance of ultimately scaled transition metal dichalcogenide (TMD) FETs for four different materials and one to five layers is investigated using ballistic quantum transport calculations with material properties derived from first-principles. Large bandgaps and effective masses are shown to result in excellent switching performance at 5 nm gate lengths, thus showing potential for low-power...
To summarize, we propose that quasi-saturation in short-channel GFET output characteristics can be effectively engineered by doping in the drain-underlap region and show using self-consistent NEGF simulations that a ∼0.2% p-type doping can enhance output resistance by 13× and intrinsic gain by 4× in 20 nm gate-length GFETs
To summarize, using ballistic NEGF-based transport simulations, we project the maximum performance achievable with monolayer MoS2 transistors. Our simulations show that these devices can provide (i) excellent switching behavior with very high ON current, (ii) a gm of about 3 mS/µm, and (iii) immunity to short channel effects thanks to the electrostatistically efficient 2-D geometry. We have also investigated...
This paper proposes two major classes of band-to-band tunneling devices: one with an ultra thin body double gate geometry where the tunneling is completely along the transport direction and the other, where tunneling is expected to be vertical by having a pocket (halo) in the gate-to-source overlap region. In both cases it uses InAs as the channel material. The vertical tunneling structure provides...
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