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The application of needle plasma jet using argon gas for surface modification is presented in this paper. The main objective is to modify the surface property of microscope slide glass from hydrophilic surface approximately to superhydrophilic surface. The power supply to the needle plasma jet was set to 400 kV and 1 kHz frequency with highly purity argon (Ar) gas as working gas to generate plasma...
The detection of coliform bacteria which contain the disease-causing microorganism is a useful indication for water contamination. Currently, the emerging of technology in molecular biology research and industry is in demand for portable and miniaturized system. This paper demonstrates the development and integration of microfluidic and optical absorbance measurement device for portable coliform bacteria...
Zinc oxide (ZnO) is a new material used in electronics applications such as spintronics, diluted magnetic semiconductor (DMS) and thin films. In this paper, the findings in fabrication and characterization of ZnO nanoparticles are reported. ZnO thin films were deposited onto glass substrates using a spin coating techniques at different pre-annealing temperatures. The optical transmittance measurement...
This report represents an experimental investigation on the structural and optical modification of ZnO thin films towards the Gd dopant content, whereby the desired films were deposited on glass substrates by chemical solution method. The prepared samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and surface profiler. The optical properties...
The present work considers the application of oxide semiconductors in the conversion of solar energy into the chemical energy required for water purification (removal of microbial cells and toxic organic compounds from water) and the generation of solar hydrogen fuel by photoelectrochemical water splitting. The first part of this work considers the concept of solar energy conversion by oxide semiconductors...
Tin sulfide (SnS) films usually possess p-type electrical conductivity. Indium tin sulfide (InxSnyS) thin films were deposited on indium-tin-oxide coated glass by electrochemical deposition from an aqueous solution containing Na2S2O3, SnSO4, and In2(SO4)3. Different concentration of In2(SO4)3 was added to observe the effects on the structural and electrical properties. All thin films were deposited...
Zinc oxide (ZnO) thin films are very promising candidates for applications in emerging thin-films transistors and solar cells. In this paper, low cost sol-gel spin coating technique was used to fabricate the ZnO films on glass substrates. The sol-gel fabrication process of the ZnO films is described. The influence of ageing duration in the spin coating process on the material properties of the ZnO...
Mg0.3Zn0.7O with the resistance of 106 Ω/cm, can acts as a semi-insulating material in MESFET structure, was deposited on quartz substrate before being immersed in ZnO solution for 4.5 hours. The ZnO solution of 0.05M was prepared one day earlier, was stirred and heat, before being left at room temperature to get better solubility. This chemical bath deposition technique was believed to be very easy,...
Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrates. Different precursor's concentrations ranging from 0.0001 M to 0.01 M (M=molarity) using zinc nitrate...
Sol-gel method with spin coating technique has been used to deposit the MgxZnx-1O (0.0<;x<;0.3) thin film. By using silicon as a substrate, this thin film being deposited and being annealed at 550°C in an hour. This is done to investigate the consequences of a different dopant concentration with different metal contact to the electrical and physical properties of the thin film. The IV characteristic...
Aluminum (Al) doped zinc oxide (ZnO) thin films with doping concentration of 1 at.% have been prepared using sol-gel spin-coating method. Annealing process has been applied on the prepared thin films at temperatures between 350 and 500 °C. The thin films were characterized using X-ray diffractometer (XRD), UV-Vis-NIR spectrophotometer and current voltage (I-V) measurement system for structural, optical...
Zinc Oxide (ZnO) thin films were deposited on a glass substrate by sol-gel process dip-coating method. Zinc acetate dehydrate Zn(O2 CCH3)2(H2O)2 are used as a starting material while 2-methoxyethanol (C3H8O2) and monoethanolamine (MEA) are used as a solvent and stabilizer. The molar ratio of zinc acetate dihydrate to MEA is 1:1. The molarity of the solution and pre-heating temperature were kept constant...
In this paper, the ZnO thin film has being growth using the TCVD technique. By using glass as a substrate, this thin film being deposited and being annealed at a different temperature. This is done to investigate the consequences of a different annealing temperature to the optical and electrical properties of this thin film. The IV characteristic has been investigated using IV probe measurement system...
Zinc Oxide (ZnO) nanofibers have received broad attention for their wide high technological applications such as for nanosensors, thin film transistors and optoelectronic devices. In this paper, a novel ZnO nanofibers synthesis method using gas blocker in thermal CVD was introduced. ZnO nanofibers with diameter varies from approximately 10 to 50 nm were successfully synthesized. The structural properties...
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