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In this paper low power balun design is presented. It is optimized for 1.575 GHz and designed in 90 nm UMC CMOS technology. Current consumption is only 0.44 mA under 1.2 V supply voltage. The simulation shows that gain and phase imbalance are equal to 0.08 dB and 0.045°, respectively. Single-ended power gain of this circuit is 2.2 dB. A special dimension matching has been made to minimize circuit...
In this paper a comparison of two low noise amplifiers (LNAs) designed in two 90 nm CMOS technologies (so called A and B) has been made. For each technology two LNA topologies were simulated: inductively degenerated cascode (LC), which achieves high gain and low noise figure (NF), and folded cascode (FC), which can work with low supply voltage. These amplifiers were designed for a GPS/Galileo receiver...
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