In this paper a comparison of two low noise amplifiers (LNAs) designed in two 90 nm CMOS technologies (so called A and B) has been made. For each technology two LNA topologies were simulated: inductively degenerated cascode (LC), which achieves high gain and low noise figure (NF), and folded cascode (FC), which can work with low supply voltage. These amplifiers were designed for a GPS/Galileo receiver. Chosen circuits demonstrate gains of 16.42 dB, 17.27 dB, 14.51 dB and 14.41 dB, consuming currents 2.492 mA, 3.093 mA, 2.834 mA and 4.609 mA with NFs equal to 1.881 dB, 1.914 dB, 2.345 dB and 2.427 dB for LC and FC architecture in A and B technologies respectively. For all amplifiers the supply voltage is 0.6 V.