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Capacitance-voltage measurements provide an attractive nondestructive method to determine the doping profile in not too highly doped semiconductor layers. However, traditionally the CV method is limited to one space dimension. Also, some error due to the abrupt depletion approximation can occur for steep profiles. In this paper, a numerical measurement data inversion algorithm is presented that circumvents...
A new method to determine the width of depleted layers and the impurity profile in semiconductor materials is presented. The method employs the channel conductance of buried channel field effect devices (with junction, oxide or Schottky-barrier gate isolation) and can be performed with DC measurements only. A concise derivation of the expressions for the impurity concentration and the depletion layer...
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