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An atomic force microscope was used to directly measure the sidewall roughness of silicon on insulator (SOI) rib and silicon carbide waveguides. In order to make the vertical walls accessible, the chip containing the ribs was fixed on a 15?? steel wedge and loaded onto an AFM scanner stage; this fitting ensures enough probe contact area on one of the sidewalls. The data was processed using a fully...
This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide variety of surface- and thin-SOI microstructures that included microcavities, RF switches and various...
This work presents the characteristics of an evanescent wave sensing system based on Plasma Enhanced Chemical Vapour Deposition (PECVD) Silicon Carbide (SiC) waveguides. Thin SiC films have been deposited onto Si substrates with a SiO2 film acting as a cladding layer around the carbide core. In the sensor, the evanescent tale of the light traveling in a waveguide senses an absorbant medium placed...
In this paper the principle, design and fabrication process of low-voltage, high speed RF switch is presented. The aluminium as the electrodes and the PECVD silicon carbide were selected as electrodes and shield materials, respectively. The operating voltage as low as 0.8 volt and high switching capacitance ratio of 180 is reported
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