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We have fabricated a CMOS vacuum magnetic sensor that exploits the deflection of an electron beam produced by field emission by a perpendicular magnetic field. The device is planar and fabricated by conventional lithography and etching processes. An extremely high magnetic field sensitivity of 4times103%/T is reported.
We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness ranged up to 140 mum and a HAR of 28 was obtained. Compared...
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