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In Anbetracht, dass durch anthropogene Einflsse wie das Ozonloch das inzwischen 3-mal so gro ist wie Amerika! die Umweltzerstrung immer grere Ausmae einnimmt, das Waldsterben ungebremst auch bei uns fortschreitet, jedes 3. Kind unter Allergien leidet und Karzinogene ungehemmt freigesetzt werden, ist es dringend notwendig, Gegenmanahmen zu ergreifen. Hier ist im besonderen die rzteschaft aufgefordert,...
A technology for thin N/sub 2/O nitrided gate oxide was developed for 0.25 mu m CMOS. A gate dielectric of 7.5 nm thickness was grown using a two-step furnace process. The first step is oxidation in diluted dry oxygen at 900 degrees C, the second step is nitridation in pure N/sub 2/O at 950 degrees C. The use of lightly nitrided gate dielectrics improved the gate oxide quality and did not degrade...
A preamorphisation technology for fabrication of shallow p+-junctions for 0.25 μm CMOS was studied. Silicon and germanium ions were used for preamorphisation. A low energy BF2+ implantation was used for the formation of the p+-region. The physical (SIMS,XTEM) and electrical characterisation of shallow p+-junctions will be presented. Large p+-diodes and 0.25 μm PMOS transistors were fabricated. The...
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