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With the developing of process technology and material quality, the progress of commercializing a 4H-SiC power PiN diode has been made greatly, but for very high power 4H-SiC PiN diode, it still faces many difficult challenges. In this paper, we design a parallel plane Power 4H-SiC PiN Diode, in which ideal breakdown voltage is about 1.9kv. From numerable simulation results with ISE-TCAD software,...