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In this work, an original Si/SiGe heterojunction tunneling field‐effect transistor which has a double‐stacked heterogeneous oxide gate (HfO2/Al2O3) structure (DSG–HJ–TFET) is designed and investigated by Sentaurus technology computer aided design (TCAD) simulation software. To ensure good interface quality, a stacked oxide gate dielectric of Al2O3 and HfO2 is proposed. The on‐state current (Ion) is...
The elastic energies of four kinds of dislocations per unit growth length have been calculated. We propose that threading screw dislocations(TSDs) along <0001> can propagate into epilayer but can not convert to TEDs. We suggest that both basal plane mix dislocations(BMDs) and threading screw dislocations (BTSDs) can convert to TEDs, and BMDs convert to TEDs much easier than BTSDs in epilayer...
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