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Distributed Denial of Service (DDoS) attacks pose a serious threat to efficient and uninterrupted Internet services. During Distributed Denial of Service (DDoS), attackers make fool of innocent servers (i.e., Slave) into reddening packets to the victim. Most low-rate DDoS attack detection mechanisms are associated with specific protocols used by the attacks. Due to the use of slave, it has been found...
Lateral channel engineering utilizing halo-pocket implant surrounding drain and source regions is effective in suppressing short channel effects. However, the reported model cannot be extended further to the pocket implantation, where inhomogeneity along the channel is the main cause for the reverse short channel effect (RSCE). A strong reverse short channel effect suppresses the short channel effect...
This paper presents an analytical surface potential model for pocket implanted sub-100 nm n-MOSFET. The model is derived by solving the Poissonpsilas equation in the depletion region at the surface with the appropriate boundary conditions at source and drain. The model includes the effective doping concentration of the two linear pocket profiles at the source and drain sides of the device. The model...
This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in...
Pocket implantation is a very useful technique to suppress short channel effects in submicrometer MOS devices. This paper presents a threshold voltage model of pocket implanted sub-100 nm nMOSFETs. The proposed model is derived using two linear equations to simulate the pockets along the channel at the surface from the source and drain edges towards the center of the MOSFET. The threshold voltage...
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