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The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium power, high power density converters (e.g., motor drives, battery chargers), which require high robustness levels. Thus, a comprehensive study of the short circuit behavior of high power E-mode GaN HEMT is the subject of this paper...
This paper presents an evaluation of a newly released power stage direct drive GaN HEMT. The double pulse test is performed and the dynamic performance is characterized. PCB layout optimization is also investigated for improved switching transients. It is shown that the direct drive system provides simplified circuit design, reduced number of external components, and small gate loop parasitics. Also,...
Wide bandgap devices (WBGs) allow Power Factor Correction (PFC) circuits to operate at MHz frequency which leads to a better power density. Compared with kHz operation, MHz PFC in critical conduction mode (CrM) yields larger inductor valley current during the switch soft turn-on. Moreover, the input current distortion near grid voltage zero crossing has not been taken into account in the traditional...
With the rapid development of wide bandgap power transistor technology, the latest gallium-nitride based power transistors are able to be used as the main switches in the high power (≥10 kW) conversion systems. In order to achieve the desired high efficiency and higher power density successfully, the entire GaN based power conversion system needs to take multiple considerations into the design stage...
The medium power rating two-level three phase voltage source inverter is among the most popular power conversion systems. The typical switching frequency of the commercial medium power rating inverter, however, is limited to tens of kHz. By increasing the switching frequency and using emerging gallium-nitride devices, the size of the overall system can be greatly reduced. This paper begins by reviewing...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
In this paper, we present a comprehensive evaluation of the latest 600 V class Gallium Nitride based Gate Injection Transistor (GaN-GIT) for high temperature and high efficiency applications. In this study, the Panasonic GITs are used as the reference for latest GaN-GIT technology. Static and dynamic testing was performed on the two GaN-GIT versions to extract critical static parameters and switching...
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