The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark...
The authors report the avalanche characteristics of the type-II absorption region when subjected to electric fields ranging from 60 kV/cm to 260 kV/cm and compare its behaviour to that of bulk In0.53Ga0.47As. Electron and hole initiated multiplication is performed on the type-II PIN photodiodes with 150 pairs of In0.53Ga0.47As/GaAs0.51Sb0.49 layers in the intrinsic region and highly doped In0.53Ga...
The ability to detect optical signals beyond 1.65 ??m is of technological interest for a number of applications. In this work we describe a novel technology that offers considerable promise for high speed, high sensitivity detection in this region utilising avalanche gain. InGaAs/GaAsSb type II superlattices as the absorption region and InAlAs as the multiplication region can be combined to form a...
We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mum and 2.0 mum, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p+-n-n+ doping...
Excess noise factors < 4 at avalanche gain of 10 measured on a series of p+in+ InAlAs diodes with avalanche regions ranging from 0.11 mum to 2.53 mum. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics...
Type-II superlattice formed by In0.53Ga0.47As/GaAs0.51Sb0.49 wafers have been grown on InP substrates. The superlattice is studied in several aspects to explore its potential in achieving ≫2.1μm detection InP-based avalanche photodiodes. The ionisation coefficients of the superlattice In0.53 Ga0.47As(5nm) /GaAs0.47Sb0.49 (5nm) are found to be similar to those of In0.53 Ga0.47 As. Hence the more compatible...
In this work newly derived non-local ionization coefficients covering the required high field range have been used, together with a random path length model, to accurately evaluate multiplication and excess noise in both InP and InAlAs multiplication regions. The multiplication of both the intentionally injected photocurrent and the tunneling current has been modeled. A range of APD multiplication...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.